Effect of diameter variation on electrical characteristics of Schottky barrier indium arsenide nanowire field-effect transistors.

Stochastic Resonance in Schottky Wrap Gate-controlled GaAs Nanowire Field-Effect Transistors and Their Networks

Understanding the impact of Schottky barriers on the performance of narrow bandgap nanowire field effect transistors.

Semiconductor nanowires have been explored as alternative electronic materials for high performance device applications exhibiting low power consumption specs. Electrical transport in III-V nanowire (NW) field-effect transistors (FETs) is frequently governed by Schottky barriers between the source/drain and the NW channel. Consequently the device performance is greatly impacted by the contacts....

Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...

Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications.

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite element method is used to model realistic device geometries and to calc...

Ionic effect on the transport characteristics of nanowire-based FETs in liquid environment

For the development of ultra-sensitive electrical bio/chemical sensors based on nanowire field-effect-transistors (FET), the influence of the ions in the solution on the electron transport has to be understood. For this purpose we establish a simulation platform for nanowire FETs in the liquid environment by implementing the modified Poisson-Boltzmann model into Landauer transport theory. We in...